Static Behavior of Chalcogenide Based Programmable Metallization Cells

Static Behavior of Chalcogenide Based Programmable Metallization Cells

abstract: Nonvolatile memory (NVM) technologies have been an integral part of electronic systems for the past 30 years. The ideal non-volatile memory have minimal physical size, energy usage, and cost while having maximal speed, capacity, retention time, and radiation hardness. A promising candidate...

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Bibliographic Details
Other Authors: Rajabi, Saba (Author)
Format: Dissertation
Language:English
Published: 2014
Subjects:
Electrical engineering
Nanoscience
Materials Science
CBRAM
impedance
memory
modelling
PMC
Programmable metallization cell
Online Access:http://hdl.handle.net/2286/R.I.25917

Internet

http://hdl.handle.net/2286/R.I.25917

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