Structural Properties of III-Nitride Semiconductors
abstract: Group III-nitride semiconductors have been commercially used in the fabrication of light-emitting diodes and laser diodes, covering the ultraviolet-visible-infrared spectral range and exhibit unique properties suitable for modern optoelectronic applications. InGaN ternary alloys have energ...
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Format: | Doctoral Thesis |
Language: | English |
Published: |
2014
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Online Access: | http://hdl.handle.net/2286/R.I.26873 |