Structural Properties of III-Nitride Semiconductors

Structural Properties of III-Nitride Semiconductors

abstract: Group III-nitride semiconductors have been commercially used in the fabrication of light-emitting diodes and laser diodes, covering the ultraviolet-visible-infrared spectral range and exhibit unique properties suitable for modern optoelectronic applications. InGaN ternary alloys have energ...

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Bibliographic Details
Other Authors:	Wei, Yong (Author)
Format:	Doctoral Thesis
Language:	English
Published:	2014
Subjects:	Physics critical thickness GaN III-nitride InGaN Light emitting device TEM
Online Access:	http://hdl.handle.net/2286/R.I.26873

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