Epitaxial Growth of High Quality InAs/GaAsSb Quantum Dots for Solar Cells

Epitaxial Growth of High Quality InAs/GaAsSb Quantum Dots for Solar Cells

abstract: The development of high efficiency III-V solar cells is needed to meet the demands of a promising renewable energy source. Intermediate band solar cells (IBSCs) using semiconductor quantum dots (QDs) have been proposed to exceed the Shockley-Queisser efficiency limit [1]. The introduction...

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Bibliographic Details
Other Authors: Kim, Yeongho (Author)
Format: Doctoral Thesis
Language:English
Published: 2015
Subjects:
Electrical engineering
Material growth
Molecular beam epitaxy
Quantum dots
Solar cells
Online Access:http://hdl.handle.net/2286/R.I.35962

Internet

http://hdl.handle.net/2286/R.I.35962

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