Temperature Dependent Qualities of Amorphous Silicon and Amorphous Silicon Carbide Passivating Stacks
abstract: Layers of intrinsic hydrogenated amorphous silicon and amorphous silicon carbide were prepared on a polished, intrinsic crystalline silicon substrate via plasma-enhanced chemical vapor deposition to simulate heterojunction device relevant stacks of various materials. The minority carrier...
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| Format: | Dissertation |
| Language: | English |
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2016
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| Online Access: | http://hdl.handle.net/2286/R.I.40230 |