Developing Ohmic Contacts to Gallium Nitride for High Temperature Applications
abstract: Gallium Nitride (GaN), being a wide-bandgap semiconductor, shows its advantage over the conventional semiconductors like Silicon and Gallium Arsenide for high temperature applications, especially in the temperature range from 300°C to 600°C. Development of stable ohmic contacts to GaN with...
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| Format: | Doctoral Thesis |
| Language: | English |
| Published: |
2016
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| Online Access: | http://hdl.handle.net/2286/R.I.40327 |