Analysis of Heat Dissipation in AlGaN/GaN HEMT with GaN Micropits at GaN-SiC Interface

Analysis of Heat Dissipation in AlGaN/GaN HEMT with GaN Micropits at GaN-SiC Interface

abstract: Gallium Nitride (GaN) based microelectronics technology is a fast growing and most exciting semiconductor technology in the fields of high power and high frequency electronics. Excellent electrical properties of GaN such as high carrier concentration and high carrier motility makes GaN bas...

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Bibliographic Details
Other Authors: Suri, Suraj (Author)
Format: Dissertation
Language:English
Published: 2016
Subjects:
Electrical engineering
Mining
GaN
Heat dissipation
HEMT
Temperature
Thermal management
Online Access:http://hdl.handle.net/2286/R.I.41224

Internet

http://hdl.handle.net/2286/R.I.41224

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