ZnTe Nanostructural Synthesis for Electronic and Optoelectronic Devices

ZnTe Nanostructural Synthesis for Electronic and Optoelectronic Devices

abstract: Zinc telluride (ZnTe) is an attractive II-VI compound semiconductor with a direct bandgap of 2.26 eV that is used in many applications in optoelectronic devices. Compared to the two dimensional (2D) thin-film semiconductors, one-dimensional (1D) nanowires can have different electronic p...

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Bibliographic Details
Other Authors: Peng, Jhih-Hong (Author)
Format: Doctoral Thesis
Language:English
Published: 2017
Subjects:
Engineering
Electrical engineering
Nanostructure
nanowires
polycrystalline
thin films
VLS
ZnTe
Online Access:http://hdl.handle.net/2286/R.I.45593

Internet

http://hdl.handle.net/2286/R.I.45593

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