Gallium Phosphide Integrated with Silicon Heterojunction Solar Cells

Gallium Phosphide Integrated with Silicon Heterojunction Solar Cells

abstract: It has been a long-standing goal to epitaxially integrate III-V alloys with Si substrates which can enable low-cost microelectronic and optoelectronic systems. Among the III-V alloys, gallium phosphide (GaP) is a strong candidate, especially for solar cells applications. Gallium phosphide...

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Bibliographic Details
Other Authors: Zhang, Chaomin (Author)
Format: Doctoral Thesis
Language:English
Published: 2017
Subjects:
Electrical engineering
Electron-selective contact
Gallium Phosphide
Minority-carrier lifetime
Molecular Beam Epitaxy
Silicon Heterojunction
Solar cells
Online Access:http://hdl.handle.net/2286/R.I.46175

Internet

http://hdl.handle.net/2286/R.I.46175

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