Defect Induced Aging and Breakdown in High-k Dielectrics
abstract: High-k dielectrics have been employed in the metal-oxide semiconductor field effect transistors (MOSFETs) since 45 nm technology node. In this MOSFET industry, Moore’s law projects the feature size of MOSFET scales half within every 18 months. Such scaling down theory has not only led to t...
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| Format: | Doctoral Thesis |
| Language: | English |
| Published: |
2018
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| Online Access: | http://hdl.handle.net/2286/R.I.49036 |