Characterization of Plasma-Enhanced Atomic Layer Deposited Ga2O3 using Ga(acac)3 On GaN
abstract: This research has studied remote plasma enhanced atomic layer deposited Ga2O3 thin films with gallium acetylacetonate (Ga(acac)3) as Ga precursor and remote inductively coupled oxygen plasma as oxidizer. The Ga2O3 thin films were mainly considered as passivation layers on GaN. Growth condi...
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| Format: | Doctoral Thesis |
| Language: | English |
| Published: |
2018
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| Online Access: | http://hdl.handle.net/2286/R.I.49373 |