Synthesis and Properties of Sn-based Group IV Alloys
abstract: Sn-based group IV materials such as Ge1-xSnx and Ge1-x-ySixSny alloys have great potential for developing Complementary Metal Oxide Semiconductor (CMOS) compatible devices on Si because of their tunable band structure and lattice constants by controlling Si and/or Sn contents. Growth of Ge...
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Format: | Dissertation |
Language: | English |
Published: |
2019
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Online Access: | http://hdl.handle.net/2286/R.I.55504 |