Nanoscale Electronic Properties in GaN Based Structures for Power Electronics Using Electron Microscopy

Nanoscale Electronic Properties in GaN Based Structures for Power Electronics Using Electron Microscopy

abstract: The availability of bulk gallium nitride (GaN) substrates has generated great interest in the development of vertical GaN-on-GaN power devices. The vertical devices made of GaN have not been able to reach their true potential due to material growth related issues. Power devices typically h...

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Bibliographic Details
Other Authors: Alugubelli, Shanthan Reddy (Author)
Format: Doctoral Thesis
Language:English
Published: 2019
Subjects:
Applied physics
Materials Science
Electrical engineering
Dopant contrast
Dopant profiling
Electron holography
Gallium nitride
Scanning electron microscopy
SIMS
Online Access:http://hdl.handle.net/2286/R.I.55563

Internet

http://hdl.handle.net/2286/R.I.55563

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