MBE Growth and Characterization of III-V Bismide Semiconductor Alloys for Mid- and Long-Wave Infrared Applications

MBE Growth and Characterization of III-V Bismide Semiconductor Alloys for Mid- and Long-Wave Infrared Applications

abstract: The molecular beam epitaxy growth of the III-V semiconductor alloy indium arsenide antimonide bismide (InAsSbBi) is investigated over a range of growth temperatures and V/III flux ratios. Bulk and quantum well structures grown on gallium antimonide (GaSb) substrates are examined. The relat...

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Bibliographic Details
Other Authors: Schaefer, Stephen Thomas (Author)
Format: Doctoral Thesis
Language:English
Published: 2020
Subjects:
Electrical engineering
Bismuth
Epitaxy
Optoelectronics
Photonics
Semiconductors
Solid-state physics
Online Access:http://hdl.handle.net/2286/R.I.62927

Internet

http://hdl.handle.net/2286/R.I.62927

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