Investigation of Light Absorption and Emission in Ge and GeSn Films Grown on Si Substrates
abstract: Ge1-ySny alloys represent a new class of photonic materials for integrated optoelectronics on Si. In this work, the electrical and optical properties of Ge1-ySny alloy films grown on Si, with concentrations in the range 0 ≤ y ≤ 0.04, are studied via a variety of methods...
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| Format: | Doctoral Thesis |
| Language: | English |
| Published: |
2011
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| Online Access: | http://hdl.handle.net/2286/R.I.9088 |