Electronic states of ultrathin GaAs/AlAs superlattices
The continuing refinement of crystal growth techniques has made possible the fabrication of semiconductor superlattices where the period can be as small as one lattice constant. Prediction of many of the properties of such systems requires a detailed description of their electronic structure. In thi...
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University of Leicester
1988
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.232980 |