Gate controlled transport in a GaAs:AlGaAs heterojunction
Optical and electron beam lithography has been used to fabricate high mobility GaAs:AlGaAs heterojunction FETs in which the current is controlled by Schottky barrier gates with novel geometries. The two dimensional electron gas (2DEG) at the heterojunction interface had a low temperature mobility of...
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University of Cambridge
1987
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.234095 |