Ion beam mixing in amorphous silicon
This thesis reports a study of certain aspects of ion beam mixing in amorphous silicon. The amorphous silicon films are deposited by RF sputter deposition technique, and heavy metal markers of gold and tantalum are used to section these films. Mixing in the amorphous silicon films is brought about b...
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University of Surrey
1990
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.253266 |