Electron transport in InP, GaAs and related structures
The electrical characteristics of III-V semiconductors and their related structures have been investigated as a function of temperature and hydrostatic pressure. Bulk InP and GaAs samples have been examined over a wide range of impurity concentrations. The two dimensional electron gas (2DEG) confine...
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University of Surrey
1990
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.253384 |