Characterisation of silicon MIS negative resistance devices
Metal-insulator-semiconductor switches (MISS), in which the T denotes some form of thin semi-insulating layer and the semiconductor part consists of a pn junction, are part of the general class of regenerative switching devices which includes the thyristor. The switching behaviour of the MISS derive...
Main Author: | |
---|---|
Published: |
Durham University
1989
|
Subjects: | |
Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.255213 |