Silicon molecular beam epitaxy : doping and material aspects
Silicon Molecular Beam Epitaxy (Si-MBE) allows independent control over the dopant and matrix species, offering the possibility of engineering device structures with resolution down to the monolayer level. However, significant improvements in material quality and doping capability are essential befo...
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University of Warwick
1990
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.257129 |