Tunnelling into InAs quantum dots
This thesis describes an experimental study of the electronic properties of semiconductor heterostructure tunnel devices. InAs self-assembled quantum dots (QDs) are incorporated into the barrier layer of a GaAs/AlAs/GaAs tunnel diode. When a voltage, V, is applied across the device, we observe reson...
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University of Nottingham
2003
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.275967 |