High resolution double crystal X-ray diffractometry and topography of III-V semiconductor compounds
Double crystal diffractometry and topography are now routinely used in many laboratories for the inspection of epitaxially grown devices. However the trend towards thinner layers and more complex structures requires the continued development of novel approaches using these techniques. This thesis is...
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Durham University
1991
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.305568 |