Dislocations in semiconductors
A set of codes with 3D periodic boundary conditions has been developed to model dislocations in semiconductors. Several schemes have been used to investigate the atomic structure of dislocations; classical potentials incorporated in a Molecular Dynamics framework, a tightbinding k-space scheme and a...
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University of Oxford
1992
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.306597 |