Structural and electrical properties of ion beam synthesised ternary iron-cobalt silicide
The fundamental properties of the binary disilicides CoSi2 and FeSi2 have been extensively studied. Epitaxial CoSi2 can be formed on silicon, however, it is very difficult to form epitaxial FeSi2 on silicon substrates. With the aim to improve the epitaxial quality of FeSi2 and also to study the effe...
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University of Surrey
1996
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.321013 |