Amorphous silicon/Langmuir-Blodgett film MIS devices
Metal-insulator-semiconductor (MIS) structures based on glow discharge produced hydrogenated amorphous silicon (a-Si:H), and incorporating Langmuir-Blodgett (LB) film insulating layers, have been investigated. Two distinct types of MIS diode have been considered: tunnelling diodes (insulator thickne...
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Durham University
1984
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.332128 |