Lattice defects in As-grown and irradiated GaAs, AlGaAs and InGaGs
The alloying of two or more semiconducting compounds is a powerful means of tailoring the properties of semiconductor devices, since material parameters generally display a continuous shift with composition. For the same reason, observing the characteristics of a defect across a range of alloys is a...
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University of Sussex
1993
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.334991 |