Vertical transport through an InAs/GaSb heterojunction at high pressures and magnetic fields
The conduction band of InAs lies lower in energy than the GaSb valence band. In order to preserve continuity of the Fermi level across the interface, charge transfer takes place resulting in a confined quasi two dimensional electron gas (2DEG) in the In As and a confined quasi two dimensional hole g...
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University of Oxford
1996
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.339267 |