Generation-recombination measurements in silicon M.O.S. capacitors
This thesis is concerned with the change in charge on a silicon MOS capacitor (MOS-C) subjected to a voltage step. The transient charge (Q-t) is controlled by the generation and recombination processes in the silicon. A review of these processes in the MOS-C, and of Q-t and other methods of measurin...
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Durham University
1983
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.347472 |