An SEM EBIC study of the electronic properties of dislocations in silicon
Individual, well structurally characterised dislocations present in n-type silicon have been studied using the electron beam induced current (EBIC) mode of an SEM.</p>An EBIC system has been designed and constructed which includes i) phase sensitive detection, ii) computerised control of the e...
| Main Author: | |
|---|---|
| Other Authors: | |
| Published: |
University of Oxford
1984
|
| Subjects: | |
| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.353138 |