Microstructural studies of high dose oxygen implanted silicon
This work describes results obtained from detailed TEM, TED, HREM and SIMS analysis of the as-implanted and annealed microstructures of high dose (O.lxl0 17/cm2 to 1.7xl0<sup>18</sup>/cm²) oxygen implanted silicon (Si). Molecular oxygen (O<sub>2</sub><sup>+</sup>)...
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University of Oxford
1993
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.357535 |