Characteristics of UHF transistors using autoregistered structures
The basis of a novel bipolar transistor structure was proposed by Dr R. Aubusson of Middlesex Polytechnic in 1977. The novelty lies in replacing the conventional overlay transistor's P+ base grid with a refractory metal grid, in order (a) to lower the base resistance and (b) to autoregister the...
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Middlesex University
1986
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.375667 |