Characteristics of UHF transistors using autoregistered structures
The basis of a novel bipolar transistor structure was proposed by Dr R. Aubusson of Middlesex Polytechnic in 1977. The novelty lies in replacing the conventional overlay transistor's P+ base grid with a refractory metal grid, in order (a) to lower the base resistance and (b) to autoregister the...
Main Author: | Camp, Robert Paul |
---|---|
Published: |
Middlesex University
1986
|
Subjects: | |
Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.375667 |
Similar Items
-
Temperature dependance of silicon bipolar transistor D.C. parameters
by: Hayes, R. C.
Published: (1986) -
Fabrication and characterisation of the Heterojunction field effect transistor (HFET) and the bipolar inversion channel field effect transistor (BIFCET)
by: Lebby, M. S.
Published: (1987) -
A study of failure locus of NPN transistors and its improvement using graded collector structures
by: Humphreys, M. J.
Published: (1988) -
Characterisation and fabrication of heterojunction bipolar transistors
by: Mawby, P. A.
Published: (1988) -
Two-dimensional numerical simulation of VDMOS transistors
by: Davies, J. T.
Published: (1985)