An investigation into the use of group VI elements as dopants in III-V materials prepared by molecular beam epitaxy
An electrochemical cell Pt/Ag/AgI/Ag2X/Pt (X=S,Se) has been used as a highly controllable source of S2 or Se2 molecules for n-type doping of GaAs and Ga1As grown by Molecular Beam Epitaxy (MBE). This source produces a pure oeam ot chalcogen dimers at low temperature (200-300°C) and is simply program...
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London Metropolitan University
1987
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.376964 |