The development of an indium gallium arsenide junction field effect transistor for use in optical receivers
The objective of this work was to design and develop a high performance field effect transistor to be suitable for monolithic integration with a photodetector for use in long wavelength optical communication systems. It was decided that the most promising type of device for this application was a ju...
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University of Surrey
1987
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.377139 |