Scanning optical microscopy of semiconductor devices
A new method to display low contrast OBIC images has been used to highlight defects in semiconductor devices. In addition an exciting novel method to obtain spatial information on the distribution of defects at the silicon/silicon-dioxide interface in metal oxide semiconductor devices has been found...
| Main Author: | |
|---|---|
| Other Authors: | |
| Published: |
University of Oxford
1987
|
| Subjects: | |
| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.379928 |