Rapid thermal annealing of acceptor implants in InP and GaInAs
Post-implant annealing of InP and GaInAs is usually accomplished using thermal cycles of 10-30 minutes duration; this thesis reports the results of a systematic study of an alternative technique, 'rapid thermal annealing' (RTA), in which the implanted material is held at elevated temperatu...
| Main Author: | |
|---|---|
| Published: |
University of Surrey
1988
|
| Subjects: | |
| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.382550 |