The temperature and pressure dependence of electron transport in plastically relaxed InxGa1-xAs
Electron transport in relaxed InxGa1-x As grown on GaAs by MBE and doped with Si to a carrier density of approximately 1016cm-3 has been investigated as a function of temperature (4.2 - 300K) and pressure (0-8 kbar) for a wide range alloy compositions. A dramatic decrease in both the mobility and ca...
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University of Surrey
1993
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.385202 |