Material quality issues in Si and SiGe molecular beam epitaxy
MBE growth of Si and SiGe allows a high degree of control over doping profiles and of strained alloy semiconductor growth. The structures that can be formed as a result have many potential applications for new solid state physics studies and for commercial device exploitation. However, the electrica...
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University of Warwick
1993
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.388378 |