Novel MOS-gated bipolar device concepts towards a new generation of power semiconductor devices
Research in MOS-gated power semiconductor devices with combined bipolarlVIOS action has been motivated by the continuous industrial need for highly efficient devices with reduced power losses and high impedance gate control. The Insulated Gate Bipolar Transistor (IGBT) and the IVIOS Controlled Thyri...
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University of Cambridge
1996
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.390180 |