The effect of tilt angle on ion implanted profiles in silicon
This thesis reports a study, of the atomical and electrical properties, as function of tilt angle for VLSI technology in silicon. The ion species investigated have been arsenic, antimony and boron. Particular attention has been given to the dose loss and electrical activation as a function of the ti...
| Main Author: | |
|---|---|
| Published: |
University of Surrey
2004
|
| Subjects: | |
| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.402807 |