Dopant activation and carrier transport in ion beam synthesised SiGe
Ion implantation has been investigated as an alternative technique to epitaxial deposition for the synthesis and doping of strained Si1-xGex alloy layers. Use of an all-implanted process has the potential to overcome many issues and difficulties of doping, reproducibility and yield in the commercial...
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University of Surrey
2003
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.402895 |