Indium and gallium as dopants for advanced silicon technology
This thesis reports a study of a viable way to pursue the aim of the production of ultra-shallow pn junctions for the next generation of CMOS devices (70 nm node). Particularly the ion implantation of alternative species to boron as p-type dopants has been investigated. Indium and gallium were the s...
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University of Surrey
2003
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.402900 |