Design of a reliability methodology : modelling the influence of temperature on gate oxide reliability
An Integrated Reliability Methodology (IRM) is presented that encompasses the changes that technology growth has brought with it and includes several new device degradation models. Each model is based on a physics of failure approach and includes on the effects of temperature. At all stages the mode...
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Durham University
2007
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.432598 |