The formation of ultra-shallow p-type junctions using vacancy engineering
For the last 40 years a natural demand for faster, more complex, and therefore, more functional electronic systems, has been the fundamental driving force behind the miniaturisation of the complementary metal oxide semiconductor transistor. The formation of highly conducting, ultra-shallow, p-type j...
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University of Surrey
2006
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.433308 |