Carrier removal in ion implanted gallium arsenide
This work is concerned with, the determination of some of the properties of GaAs after bombardment with , H1+, H2+, H3+, O2+ and Ar+ ions. The capacitance-voltage, Copeland, Hall-effect and resistivity measurement methods have been employed as diagnostic techniques. The carrier removal rate, i.e. nu...
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University of Surrey
1978
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.456369 |