Theory and measurements of thyristors with particular reference to lateral effects
The characteristics and theories of four-layer pnpn semiconductor devices have been considered with particular reference to the two transistor analogy of thyristor in order to obtain an expression for the current-voltage characteristics of the device. The Small-signal, low-frequency current gains of...
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Brunel University
1974
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.460915 |