Optical properties of ion-implanted impurities in gallium nitride
The III-V semiconductor GaN is of technological interest because of its high band gap (3.44 eV at 300 K). The impurities K, Ca, Zn, B, Al, C, Si, P, As, S, F, and Cl have been implanted into GaN. After annealing the optical spectra of the implanted material were investigated. Studies were also made...
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University of Bath
1976
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.465437 |