Novel high-K dielectrics for MOS applications
The ever increasing demand for improved performance of silicon based microelectronics, at a lower cost, has resulted in an aggressive reduction, or scaling, in the dimensions of the metal-oxide-semiconductor field effect transistors (MOSFET) in integrated circuits (IC). Silicon oxynitride-based gate...
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University of Liverpool
2008
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.490807 |