Growth and characterisation of III-V semiconductor nanostructures
This thesis describes the growth and characterisation of III-V semiconductor materials and nanostructures. The material was grown by molecular beam epitaxy (MBE) and characterised using a range of techniques including atomic force microscopy (AFM), cross-sectional scanning tunnelling microscopy (XST...
| Main Author: | |
|---|---|
| Published: |
University of Nottingham
2008
|
| Subjects: | |
| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.490983 |